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october 2011 doc id 15210 rev 4 1/20 20 stf16n65m5, STI16N65M5 stp16n65m5,stu16n65m5,stw16n65m5 n-channel 650 v, 0.230 , 12 a mdmesh? v power mosfet in to-220fp, i2pak, to-220, ipak, to-247 features worldwide best r ds(on) higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroe lectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d stf16n65m5 STI16N65M5 stp16n65m5 stu16n65m5 stw16n65m5 710 v < 0.279 12 a 1 2 3 1 2 3 1 2 3 to-247 to-220fp to-220 3 2 1 ipak 1 2 3 i2pak ta b ta b tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging stf16n65m5 STI16N65M5 stp16n65m5 stu16n65m5 stw16n65m5 16n65m5 to-220fp i2pak to-220 ipak to-247 tu b e www.st.com
contents stf/i/p/u/w16n65m5 2/20 doc id 15210 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
stf/i/p/u/w16n65m5 electrical ratings doc id 15210 rev 4 3/20 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-220, i2pak, ipak, to-247 v ds drain-source voltage (v gs = 0) 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 12 (1) 1. limited by maximum junction temperature 12 a i d drain current (continuous) at t c = 100 c 7.3 (1) 7.3 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 48 (1) 48 a p tot total dissipation at t c = 25 c 90 25 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj dv/dt (3) 3. i sd 12 a, di/dt 400 a/s, v dd = 400 v, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i2pak to-220 ipak to-247 r thj-case thermal resistance junction-case max 51.38c/w r thj-amb thermal resistance junction- ambient max 62.5 100 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stf/i/p/u/w16n65m5 4/20 doc id 15210 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.230 0.279 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1250 30 3 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -100-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -30-pf r g intrinsic gate resistance f = 1 mhz open drain - 2 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 6 a, v gs = 10 v (see figure 20 ) - 31 8 12 - nc nc nc
stf/i/p/u/w16n65m5 electrical characteristics doc id 15210 rev 4 5/20 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 8 a, r g = 4.7 , v gs = 10 v (see figure 21 ) (see figure 24 ) - 25 7 6 8 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 12 48 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v (see figure 24 ) - 300 3.5 23 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 24 ) - 350 4 24 ns c a
electrical characteristics stf/i/p/u/w16n65m5 6/20 doc id 15210 rev 4 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp figure 4. safe operating area for to-220, i2pak, to-247 figure 5. thermal impedance for to-220, i2pak, to-247 figure 6. safe operating area for ipak figure 7. thermal impedance for ipak i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 611v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 610v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 609v1
stf/i/p/u/w16n65m5 electrical characteristics doc id 15210 rev 4 7/20 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on resistance figure 12. output capacitance stored energy figure 13. capacitance variations i d 15 10 5 0 0 v d s (v) (a) 2 20 6.5v 6v 7v v g s =10v 7.5v 4 6 8 10 12 14 16 1 8 5.5v am0 3 17 8 v1 i d 15 10 5 0 3 5 v g s (v) (a) 4 6 7 20 v d s =10v 8 9 am0 3 179v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d =1ma am0 3 1 8 7v1 r d s (on) 0.220 0.215 0 4 i d (a) ( ) 2 6 0.225 v g s =10v 10 8 12 0.210 0.2 3 5 0.2 3 0 0.240 0.245 am0 3 1 8 1v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 200 3 00 500 600 1 3 5 7 am0 33 12v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 3 1 83 v1
electrical characteristics stf/i/p/u/w16n65m5 8/20 doc id 15210 rev 4 figure 14. gate charge vs gate-source voltage figure 15. normalized on resistance vs temperature figure 16. normalized gate threshold voltage vs temperature figure 17. source-drain diode forward characteristics figure 18. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode v g s 6 4 2 0 0 10 q g (nc) (v) 8 25 10 v dd =520v i d =6a 12 5 15 20 3 0 3 5 100 200 3 00 400 500 v d s am0 3 1 8 2v1 r d s (on) 1.7 1.5 1. 3 0.5 -50 0 t j (c) (norm) 50 100 0.7 0.9 1.1 2.1 1.9 v g s =10v i d =6.5v am0 3 1 8 5v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) 1.10 50 100 i d =250 a am0 3 1 8 4v1 v s d 0 5 i s d (a) (v) 10 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =25c t j =150c t j =-25c am0 3 1 8 6v1 e 60 40 20 0 0 20 r g ( ) ( j) 10 3 0 8 0 100 40 eon eoff am10 3 59v1
stf/i/p/u/w16n65m5 test circuits doc id 15210 rev 4 9/20 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefor m figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stf/i/p/u/w16n65m5 10/20 doc id 15210 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stf/i/p/u/w16n65m5 package mechanical data doc id 15210 rev 4 11/20 figure 25. to-220fp drawing table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stf/i/p/u/w16n65m5 12/20 doc id 15210 rev 4 figure 26. i2pak (to-262) drawing table 9. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
stf/i/p/u/w16n65m5 package mechanical data doc id 15210 rev 4 13/20 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data stf/i/p/u/w16n65m5 14/20 doc id 15210 rev 4 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
stf/i/p/u/w16n65m5 package mechanical data doc id 15210 rev 4 15/20 table 11. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data stf/i/p/u/w16n65m5 16/20 doc id 15210 rev 4 figure 28. ipak (to-251) drawing 006 8 771_h am09214v1
stf/i/p/u/w16n65m5 package mechanical data doc id 15210 rev 4 17/20 table 12. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
package mechanical data stf/i/p/u/w16n65m5 18/20 doc id 15210 rev 4 figure 29. to-247 drawing 0075 3 25_f
stf/i/p/u/w16n65m5 revision history doc id 15210 rev 4 19/20 5 revision history table 13. document revision history date revision changes 12-feb-2009 1 first release. 21-oct-2010 2 ? document status promoted from preliminary data to datasheet. ? added new package, mechanical data: i2pak. ? removed dpak, d2pak packages and mechanical data. 10-feb-2011 3 modified r ds(on) value (see ta b l e 4 and figure 11 ). 13-oct-2011 4 modified section 2.1: electrical characteristics (curves) : ? figure 8 , figure 9 , figure 10 , figure 11 , figure 15 and figure 16 ? added figure 18 updated r ds(on) value in ta b l e 4 updated values in ta bl e 6 minor text changes.
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